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(R)
THBTxxx11D
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE
Application Specific Discretes A.S.D.TM
FEATURES BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND GND, RING AND GND AND BETWEEN TIP AND RING. PEAK PULSE CURRENT : IPP = 30A for 10/1000s surge. HOLDING CURRENT : IH = 150mA. AVAILABLEIN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE. DESCRIPTION Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The "4-point" configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : CNET : FCC part 68 : BELLCORE TR-NWT-001089 :
(*) With series resistors or PTC.
SO8
SCHEMATIC DIAGRAM
TIP 1 GND 2 GND 3 RING 4
8 TIP 7 GND 6 GND 5 RING
10/700s 5/310s 10/700s 5/310s 1.2/50s 1/20s 0.5/700s 0.2/310s 2/10s 2/10s 2/10s 2/10s
1.5kV 20A (*) 2kV 20A (*) 1.5kV 20A (*) 1.5kV 20A (*) 2.5kV 40A (*) 2.5kV 40A (*)
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 - Ed: 5A
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THBTxxx11D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP ITSM Tstg Tj TL Parameter Peak pulse current (see note 1) Non repetitive surge peak on-state current (F=50Hz) Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s 10/1000 s tp = 10 ms t = 1s Value 30 8 3.5 - 40 to + 150 + 150 260 Unit A A C C C
Note 1 : Pulse waveform : 10/1000s tr=10s
% I PP 100
tp=1000s
50
0 tr tp
t
TEST CIRCUITS FOR IPP
Longitudinal mode TIP
IPP/2 RP
See test circuit 3
RING
IPP/2 RP
THBT
GND
Transversal mode
TIP or RING I
See test circuit 3
PP
RP
THBT
GND
THERMAL RESISTANCES Symbol Rth (j-a)
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Parameter Junction to ambient
Value 170
Unit C/W
THBTxxx11D
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO VF IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Forward voltage drop Peak pulse current Capacitance
I
IPP
IBO IH IR
V
VRM V VBO BR
STATIC PARAMETERS Type IRM @ VRM max.
A V
IR @ V R max. note 1
A V
VBO @ max. note 2
V
IBO max.
mA
IH min note 3
mA
C max note 4
pF
min.
mA
THBT15011D THBT16011D THBT20011D THBT27011D
Note 1: Note 2: Note 3: Note 4:
5 5 5 5
135 135 180 240
50 50 50 50
150 160 200 270
210 230 290 380
50 50 50 50
400 400 400 400
150 150 150 150
80 80 80 80
IR mesuared at VR guarantees VBR > VR Measured at 50 Hz (1 cycle) test circuit 1. See the reference test circuit 2. VR = 1V, F = 1MHz.
DYNAMIC BREAKOVER VOLTAGES (Transversal mode) Type THBT15011D Symbol VBO Test conditions (see note 5) 10/700s 1.2/50s 2/10s 10/700s 1.2/50s 2/10s 10/700s 1.2/50s 2/10s 10/700s 1.2/50s 2/10s 1.5kV 1.5kV 2.5kV 1.5kV 1.5kV 2.5kV 1.5kV 1.5kV 2.5kV 1.5kV 1.5kV 2.5kV Rp=10 Rp=10 Rp=62 Rp=10 Rp=10 Rp=62 Rp=10 Rp=10 Rp=62 Rp=10 Rp=10 Rp=62 IPP=30A IPP=30A IPP=38A IPP=30A IPP=30A IPP=38A IPP=30A IPP=30A IPP=38A IPP=30A IPP=30A IPP=38A Maximum 240 250 260 260 270 290 320 350 400 390 440 480 Unit V
THBT16011D
VBO
V
THBT20011D
VBO
V
THBT27011D
VBO
V
Note 5 :
See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
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THBTxxx11D
TEST CIRCUIT 1 for IBO and VBO parameters :
tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 .
TEST CIRCUIT 2 for IH parameter.
R D.U.T. V BAT = - 48 V Surge generator
- VP
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the I H value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max.
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THBTxxx11D
TEST CIRCUIT 3 for IPP and VBO parameters :
R4
(VP is defined in no load condition)
TIP R2 RING R3 R1
L
VP
C1
C2
G ND
Pulse (s) tr 10 1.2 2 tp 700 50 10
Vp (V) 1500 1500 2500
C1 (F) 20 1 10
C2 (nF) 200 33 0
L (H) 0 0 1.1
R1 () 50 76 1.3
R2 () 15 13 0
R3 () 25 25 3
R4 () 25 25 3
IPP (A) 30 30 38
Rp () 10 10 62
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THBTxxx11D
Fig. 1: Surge peak current versus overload duration.
ITSM(A)
10 9 8 7 6 5 4 3 2 1 0 1E-2 1E-1 1E+0
F=50H z Tj initial=25C
t(s)
1E+1 1E+2 1E+3
APPLICATION NOTE 1 Connect pins 2, 3, 6 and 7 to Ground in order to guarantee a good surge current capability for long duration disturbances. In order to take advantage of the" 4-point " structure of the THBT, the TIP and RING lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients.
TIP 1
8 TIP
2
2 GND 3
7 GND 6
RING 4
5 RING
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THBTxxx11D
APPLICATION CIRCUIT : 1 - Line card protection
RING GENERA TOR
- VBAT
LINE A
T E S T R E L A Y S
PTC
RING RELAY
220 nF
SLIC
THBTxxxD PTC LCP1511D
LINE B
2 - Protection for telephone set with ground key
HOOK LA
SPEECH DIALING RINGER
LB THBTxxxD E GROUND KEY
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THBTxxx11D
ORDER CODE
THBT
150 1 1 D RL
PACKAGING: RL = tape and reel. = tube.
BIDIRECTIONAL TRISIL BREAKDOWN VOLTAGE MARKING Types THBT15011D THBT16011D THBT20011D THBT27011D Package SO8 SO8 SO8 SO8 Marking BT151D BT161D BT201D BT271D VERSION
LOW DYNAMIC CHARACTERISTICS. PACKAGE: 1 = SO8 Plastic.
PACKAGE MECHANICAL DATA. SO8 Plastic
MARKING : Logo, Date Code, Part Number.
REF. DIMENSIONS Millimetres Min. Typ.
c1 C a3 a2 A b1
L
Inches Max. Min. Typ. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007
Max. 0.069 0.010 0.065 0.019 0.010
A a1 a2 b b1 C c1 D E
0.1 0.35 0.19 0.50
b e3
S
e
a1 E
D M
0.020 45(typ) 5.0 6.2 0.189 0.228 0.050 0.150 4.0 0.6 8 (max) 0.15 0.157 0.050 0.024 1.27 0.016 0.197 0.244
8
5 F
4.8 5.8 1.27 3.81 3.8 0.4
e e3 F L M S
1
4
Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.077g
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THBTxxx11D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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